Electro-Optical Materials & Device Technologies | |
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Material Growth
Molecular Beam Epitaxy (MBE)Amethyst has acquired a Riber 49 to establish its production capability for Hg based growth of II-VI materials and composite substrates. Installation and qualification of this system is scheduled to be completed by December 2011. Amethyst has worked closely with the U.S. Army Research Laboratory (ARL) to transfer ARL's expertise in composite substrate and HgCdTe material and device growth. The Ardmore Development Authority (ADA) is currently working with Amethyst to install their Riber Epineat system at the ARI facility for growth of a multitude of semiconductor systems. It is purposed as a development system for ARI and other local small businesses and educational entities. This III-V system is capable of Sb, As and N semiconductor growth. Amethyst's collaborative efforts with Oklahoma State University also provides Amethyst with development capabilities in IV-VI materials for infrared or thermoelectric applications. |
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