Fourier-transform infrared spectroscopy (FTIR)

Sub-band transitions and band bending, and associated changes in the electrical properties of semiconductors can be characterized by the absorption IR spectroscopy.  A beam of IR is transmitted through the sample (or reflected off the sample) and the resonant inter-atomic bond energies are absorbed, which are detected by interferometer. Absorbed energies are the signature of chemical bond preset in the sample.
ARI is equiped with a Nicolet 6700 Analytical FTIR with following specification:

  • 0.1 cm-1 resolution
  • Integrated Scan Buttons
  • Gold optics
  • DLaTGS Detector (detection range 400 to 4000 cm-1 wave number)
  • Ge on KBr beam splitter
  • Talon interchangeable beam splitter system
  • Sealed and Desiccated to avoid humid background
  • Ge-ATR crystal for lower depth of penetration and IR non-transparent materials analysis in attenuated total reflection mode. In attenuated total reflection (ART) mode much tighter spot size (< 250 mm) and depth of penetration can be maintained for thin film characterization.

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